Work

Extremely High ESD Failure Voltage of RESURF LDMOS Devices for ESD Resilient Driver Applications

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3556114

Authors: Aakanksha Mishra, M. Monishmurali, B. Sampath Kumar, Shaik Ahamed Suzaad, Shubham Kumar, Kiran Pote Sanjay, Amit Kumar Singh, Avinash Singh, Ankur Gupta, Mayank Shrivastava

Institutions: Indian Institute of Technology Delhi, Indian Institute of Science Bangalore

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409311253

FWCI: 0.676

Cites: 23

Cited by: 3

Related to: 10