Work

Fast and Accurate Prediction of Electrical Characteristics of Next-Generation Node 3-D NAND Flash Memory Using Transfer Learning

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3556104

Authors: Hyundong Jang, Soomin Kim, Kyeongrae Cho, Kihoon Nam, Donghyun Kim, Hyeok Yun, Seungjoon Eom, Rock-Hyun Baek

Institutions: Pohang University of Science and Technology, Samsung (South Korea), Samsung Electronics (South Korea), SK Hynix (South Korea)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Trade, Industry and Energy

Awards: G2032318927, G7576846306

OpenAlex ID: W4409311519

FWCI: 1.386

Cites: 18

Cited by: 6

Related to: 10