Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling
Year: 2025
Type: article
Abstract: We report the successful integration of low-temperature polycrystalline all-around diamond as heat spreaders with 150 nm gate length N-polar GaN MISHEMT platform to improve power efficiencies for X-band applications. With an all-around integration scheme, the CVD-grown diamond reduces channel’s peak temperature, improving device performance and reliability. A combination of optimized low-temperature diamond growth at 500 °C with the thermally stable molybdenum gate metal and MOCVD-grown SiNx gate-dielectric was utilized for the successful integration. The fabricated device exhibited a IDSS of 0.96 A mm−1 and an ON-to-OFF ratio of 105. This marks the first post-process diamond integration on a RF GaN HEMT device.
Source: Applied Physics Express
Institutions: Stanford University, University of California, Santa Barbara
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,365
OpenAlex ID: W4409318334