Year: 2025
Type: article
Abstract: ABSTRACT Aluminum nitride doped with unintentional impurities was synthesized using the NH₄Cl(s)‐assisted vapor‐phase reaction method. X‐ray diffraction (XRD) confirmed the formation of the hexagonal wurtzite phase with lattice parameters a = 3.111 Å and c = 3.978 Å. Energy‐dispersive spectroscopy (EDS) detected the presence of Al, N, C, O, Si, and Fe in the aluminum nitride. Fourier‐transform infrared spectroscopy (FTIR) and Raman spectroscopy confirmed characteristic vibrational modes, further supporting the crystalline structure. Photoluminescence (PL) analysis revealed two excitation peaks at 280 and 335 nm, associated with C N Si Al , V Al 3O N , and C N V N complex defects. The emission spectrum exhibited a predominant peak at 405 nm, in agreement with previous reports, suggesting a correlation with V Al 2O N defects. Thermoluminescence (TL) measurements showed glow curves with peaks at 460, 525, and 600 K, confirmed through second derivative and deconvolution analysis. Activation energy values (0.69 and 0.45 eV) align with those reported for Si Al defects. The TL response displayed saturation at approximately 140 Gy, with the third peak exhibiting a linear response in the range of 12.6–136 Gy. These results highlight the potential of AlN for TL applications, emphasizing the role of unintentional impurities in defect formation and luminescence properties.
Source: Luminescence
DOI: 10.1002/bio.70170
Language: English
Subfield: Radiation
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,350
OpenAlex ID: W4409353283