Work

Temperature-Agnostic Pt/Au Ohmic Contacts on n-Type Gallium Nitride for Self-Aligned MOSFETs

Year: 2025

Type: article

Source: IEEE Transactions on Materials for Electron Devices

DOI: 10.1109/tmat.2025.3559869

Authors: Kevin J. Reilly, Andrew T. Binder, Jeffrey Steinfeldt, Andrew Allerman, Robert J. Kaplar

Institution: Sandia National Laboratories

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Honeywell, Vehicle Technologies Office

OpenAlex ID: W4409356752

FWCI: 0.969

Cites: 43

Cited by: 3

Related to: 10