Work

High modulation efficiency micro-ring modulator with low driving voltage for high speed optical interconnection

Year: 2025

Type: article

Abstract: A high modulation efficiency depletion mode silicon micro-ring modulator with NRZ modulation rate up to 128 Gb/s has been demonstrated. The MRM utilizes a meandering doping structure to enhance the overlap factor between the carrier variation region and light field to improve modulation efficiency at 33.5 pm/V, ∼38% improvement from a conventional doping design. It has a quality factor of ∼5200, a high electro-optical bandwidth above 67 GHz, and can reach 110 GHz under the optical peaking effect. The drive voltage of the MRM loading a 128 Gb/s signal is 1.36 V; the corresponding power consumption is ∼8.54 fJ/bit.

Source: Optics Express

DOI: 10.1364/oe.560256

Authors: Shiao Zhao, Xiaoyang Zhao, Haibo Kuang, Yu Zhang, Jian Wang

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funders: National Natural Science Foundation of China, Natural Science Foundation of Hubei Province, Ministry of Industry and Information Technology of the People's Republic of China, National Key Research and Development Program of China

Awards: G1435272193, G2051600833, G2234878162, G3571419916, G7135273502