Work

Suppression of Hillock Defects on (010) β-Ga2O3 Homoepitaxial Layer Growth via Halide Vapor Phase Epitaxy

Year: 2025

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c00070

Authors: Haohan Ye, Defan Wu, Zhun Yang, Dacheng Xu, Yuchao Yan, Zhu Jin, Ning Xia, Hui Zhang, Deren Yang

Institution: Zhejiang University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Postdoctoral Program for Innovative Talents, Fundamental Research Funds for the Central Universities, Key Research and Development Program of Zhejiang Province

Awards: G1089425203, G2151190160, G3900898891, G3999692801, G6437590653, G7149167350, G7306764439

OpenAlex ID: W4409404183

FWCI: 1.601

Cites: 45

Cited by: 10

Related to: 10