Low threshold InAs/InP quantum dot lasers
Year: 2025
Type: article
Abstract: InAs/InP quantum dot (QD) lasers are promising light sources for optical communication due to their discrete energy states, offering advantages such as low threshold current density and enhanced thermal stability. However, challenges remain in achieving uniform QDs on the InAs/InAlGaAs/InP material system to ensure low threshold current density and high-temperature operation. This work demonstrates low threshold, high-temperature L-band InAs/InAlGaAs/InP QD lasers grown on InP (001) substrates with the indium-flush technique to optimize QD uniformity. The as-cleaved seven-stack QD lasers under pulsed injection exhibit a very low threshold current density of 69 A/cm 2 per QD layer and achieve a high maximum operating temperature of 130 °C. These results represent significant progress in InAs/InP QD laser development, highlighting the potential for high-performance semiconductor light sources in optical communication.
Source: Optics Express
DOI: 10.1364/oe.561471
Institutions: Cardiff University, Université Grenoble Alpes
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Awards: Future Compound Semiconductor Manufacturing Hub, EPSRC Compound Semiconductor Manufacturing Hub for a Sustainable Future, A National Research Facility for Epitaxy, QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS), EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing, C-band quantum-dot lasers on monolithically grown Si platform, C-band quantum-dot lasers on monolithically grown Si platform
OpenAlex ID: W4409407800