Work

CMOS compatibility and excellent resistive switching of tantalum oxide-based resistive switching memory

Year: 2025

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/adcc86

Authors: Liping 丽萍 Fu 傅, Gaoyuan 高远 Pan 潘, Rui 瑞 Hao 郝, Xiaolong 小龙 Fan 范, Yingtao 颖弢 Li 李

Institution: Lanzhou University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409419084

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Cites: 19

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Related to: 10