Work

Elucidating the Role of Ferroelectric in Memory Window Expansion of Ferroelectric FETs With Gate-Side Injection

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3552013

Authors: Yixin Qin, Saikat Chakraborty, Zijian Zhao, Sizhe Ma, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Xiao Gong, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni

Institutions: University of Notre Dame, The University of Texas at Austin, Samsung Electronics (South Korea), National University of Singapore, Pennsylvania State University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Ministry of Education - Singapore

OpenAlex ID: W4409427683

FWCI: 1.36

Cites: 26

Cited by: 6

Related to: 10