Exploring the photoswitching behavior of electrophoretically deposited (EPD) HfXSn1-XSe2 (X = 0.05, 0.1) thin films-based PEC-PD
Year: 2025
Type: article
Abstract: Alloy engineering is one of the best techniques for synthesising transition metal dichalcogenide materials (TMDCs) to cultivate advanced optoelectronic devices . In the present study, we discussed the effect of Hf on pristine SnSe 2 based on structural and photosensing properties. The bulk material of Hf X Sn 1-X Se 2 (X = 0.05, 0.1) exfoliate using the liquid phase exfoliation method. Thin films of Hf X Sn 1-X Se 2 (X = 0.05, 0.1) are grown using the electrophoretic deposition (EPD) technique. The elemental confirmation of these materials is done by energy dispersive analysis of X-ray (EDAX). The hexagonal crystal structure of the grown thin film is confirmed by X-ray diffraction (XRD) analysis. The photosensing properties of EPD films are studied by fabricating photoelectrochemical cell photodetector (PEC-PD) using the electrolysis method. The photosensing properties are analyzed using poly and mono-chromatic light under zero bias at room temperature. The remarkable photocurrent of both PEC-PD suggests the use of this material in optoelectronic fields is one of the good choices. Overall results indicate excellent performance of given materials as PEC-PD.
Source: Journal of Alloys and Compounds
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,660
OpenAlex ID: W4409429879