Probing into Intraband Transitions Enabled Charge Carrier Dynamics of THz Response Generated in Graphene/MoS 2 Heterostructures
Year: 2025
Type: article
Abstract: The engineering of terahertz phonons is challenging due to difficulties in achieving sub‐nanometer material precision and in facilitating efficient phonon coupling at terahertz frequencies region. The effective generation, detection, and manipulation of terahertz phonons via the integration of atomically thin layers in van der Waals heterostructures can enable new designs for next‐generation optoelectronic quantum devices, offering new avenues for thermal engineering in the terahertz regime. Here, optical pump terahertz probe and terahertz time‐domain experiments are used to reveal the behavior of charge carrier transfer in real time at heterostructure interfaces of single‐layer graphene and monolayer MoS 2 upon photoexcitation and plausible mechanism has been put forward. Moreover, a temperature‐dependent terahertz response of GM heterostructure along with experimental observation is explored in detail with considered appropriate theoretical models. These insights can prove valuable for designing the next generation of optoelectronic applications with stacked 2D heterostructures within the terahertz bandwidth.
Source: Advanced Materials
Authors: Saloni Sharma, Divyansh Pratap Singh, Shreeya Rane, Shubhda Srivastava, Anand B Puthirath, Ruturaj Puranik, Utkarsh Pandey, Snehal Haldankar, Vibhavari Parkar, Fathimath Faseela, Shriganesh S. Prabhu, Dibakar Roy Chowdhury, P. M. Ajayan, Bipin Kumar Gupta
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4409431971