Work

Enhancement of Electro-Optical Characteristics in GaN-Based Ultraviolet Laser Diodes Through Upper Optical Confinement Structure Design

Year: 2025

Type: article

Abstract: Two series of laser diodes with different AlGaN cladding layers were investigated, and it was found that the internal absorption loss was reduced by using a u-AlGaN and p-AlGaN composite upper cladding layer, and the performance of LD was improved. The optimized thickness of u-AlGaN is related to the waveguide layer structure of LDs. For LDs with a thick waveguide layer, the u-AlGaN cladding layer should be thinner to achieve high hole concentration and high hole injection efficiency. For LDs with a thin waveguide layer, the u-AlGaN cladding layer can be thick to suppress the internal absorption loss. Thus, a composite upper waveguide structure with a thinner waveguide layer, a thicker u-AlGaN cladding layer, and a p-AlGaN cladding layer is an optimized structure for short waveguide UV LDs due to lower carrier loss and absorption loss.

Source: Nanomaterials

DOI: 10.3390/nano15080596

Authors: Zhiwei Li, Jing Yang, Lina Yu, Linjun Sun, Min Wu, Weijun Li

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

Funder: National Natural Science Foundation of China