Work

Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0256300

Authors: Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Mayand Dangi, Rajnin I. Roya, Ruixin Bai, Jiahao Chen, Qinchen Lin, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat

Institution: University of Wisconsin–Madison

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Advanced Research Projects Agency - Energy

Awards: ASCENT: Reducing greenhouse emissions with ultra-efficient High-Voltage Monolithic Bidirectional Transistors, CAREER: Towards highly efficient UV emitters with lattice engineered substrates, G8533545830

OpenAlex ID: W4409432704

FWCI: 4.651

Cites: 52

Cited by: 15

Related to: 10