Work

The three dimensional model of extended defects in β-Ga2O3 homoepitaxial film

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0256203

Authors: Zishi Wang, Hezhi Zhang, Man Hoi Wong, Wenxiang Mu, Pei Wang, Jing Di, Chunlei Tao, Huanyue Zhang, Zhiguang Sun, Chang Wang, Xiaochuan Xia, Hongwei Liang

Institutions: Dalian University of Technology, Shandong University, State Key Laboratory of Crystal Materials, Hong Kong University of Science and Technology, Dalian Institute of Chemical Physics, Chinese Academy of Sciences

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Dalian Science and Technology Innovation Fund

Awards: G203585411, G2532797881, G2813666866, G3418604923, G4724891001, G5896081411, G5950108647, G8045105980

OpenAlex ID: W4409432809

FWCI: 0.16

Cites: 38

Cited by: 1

Related to: 10