Work

On the epitaxial growth in ALD Co 3 O 4 - and NiO-based bilayers

Year: 2025

Type: article

Abstract: texture from 〈111〉 to 〈100〉 on a NiO template. The films are shown to conform to the crystal orientation of the template material, whilst crystallizing directly in their own stable crystal structure with corresponding metal atom coordination. Further investigation includes ALD process parameters for NiO growth: the film texture is found to depend on the choice of co-reactant and the above-highlighted hetero-epitaxial relationship is stronger for plasma-based processes. In conclusion, these results demonstrate an original approach for application-oriented crystallographic engineering in thin films.

Source: Nanoscale

DOI: 10.1039/d5nr01212k

Authors: Renée T. M. van Limpt, Cristian A. A. van Helvoirt, Mariadriana Creatore, Marcel A. Verheijen

Institutions: Eindhoven University of Technology, Eurofins (Netherlands)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Syngaschem, Nederlandse Organisatie voor Wetenschappelijk Onderzoek, Provincie Noord-Brabant, Toyota Motor Europe

Award: Bringing emerging materialS in industrially relevant Conditions for the next generation of ALkaline Electrolysers (SCALE)