Work

Effect of Rb addition on Cu2SnS3 thin-film solar cells

Year: 2025

Type: article

Abstract: Copper tin sulfide (Cu2SnS3, CTS) thin films were fabricated by depositing RbF via thermal evaporation onto Cu/Sn precursors prepared via electron-beam evaporation, followed by sulfurization of the RbF/Cu/Sn precursors inside a quartz ampoule. The amount of deposited RbF varied between 0 and 100 mg. Thin-film evaluation through Raman spectroscopy revealed that Rb addition promoted the formation of single-phase monoclinic CTS, whereas surface scanning electron microscopy images showed an increase in grain size. Furthermore, a solar-cell performance evaluation indicated increases in the short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and power-conversion efficiency (PCE) with the addition of Rb. Notably, a PCE of 3.91% was achieved when 80 mg of RbF was deposited.

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/adcccd

Authors: Kazuki Hasegawa, Hideaki Araki

Institutions: Nagaoka National College of Technology, National Institute of Technology

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $2,210