Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0254888
Authors: Shubo Wei, Zifan Hong, Chengchao Li, Mingtao Long, Ying Li, Yujian Chen, Feng Zhang, Weifeng Yang
Institution: Xiamen University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G380329566, G7605418896
OpenAlex ID: W4409456495