Work

A Compact Model for Degradation Behaviors in Hf 0.2 Zr 0.8 O 2 Anti-Ferroelectric Devices

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3558484

Authors: Lijian Chen, Yaru Ding, Zeping Weng, Jianguo Li, Daolin Cai, Yi Zhao

Institutions: Zhejiang University, State Key Laboratory of Silicon Materials, East China Normal University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science and Technology Major Project, Defence Science and Technology Laboratory

Award: G7250844229

OpenAlex ID: W4409474554

FWCI: 0.453

Cites: 27

Cited by: 2

Related to: 10