Work

Circular p-GaN/p-AlGaN Rods With Metal/Thin Dielectric-Type p-Contact to Increase the Wall-Plug Efficiency for 258-nm AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3558159

Authors: Wenjie Li, Zhaoqiang Liu, Chunshuang Chu, Kangkai Tian, Fuping Huang, Yonghui Zhang, Xiao Wei Sun, Zi-Hui Zhang

Institutions: Hebei University of Technology, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Guangdong University of Technology, Southern University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2517984509, G4607107341, G7535420971, G904744729

OpenAlex ID: W4409475294

FWCI: 1.582

Cites: 25

Cited by: 5

Related to: 10