Work

Enhancing the external quantum efficiency of GaN-based micro-LEDs using an InGaN quantum well/quantum dot composite structure with an AlGaN interlayer

Year: 2025

Type: article

Source: Optics Letters

DOI: 10.1364/ol.559527

Authors: Yi Gong, Ying Gu, Peng Zhang, Mengyang Huang, Haowen Hua, Shan Jin, Wenxian Yang, Jianjun Zhu, Lifeng Bian, Shulong Lu

Institutions: Chinese Academy of Sciences, University of Science and Technology of China, Fudan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G1299215723, G52446831, G6283364914, G7239127759

OpenAlex ID: W4409479292

FWCI: 0.646

Cites: 22

Cited by: 2

Related to: 10