Work

10.4% external quantum efficiency 294 nm UV LEDs at 20 A/cm 2 with a fully transparent tunnel junction

Year: 2025

Type: article

Abstract: We report on the successful demonstration of an all metalorganic chemical vapor deposition (MOCVD) grown fully transparent tunnel junction (TJ) germicidal UV LED, resulting from the use of a lightly doped n - -AlGaN contact layer enabling rapid MOCVD growth optimization. We found that the optimal condition for LED performance was a 3 nm p ++ -Al 0.6 Ga 0.4 N / 9 nm n ++ -Al 0.65 Ga 0.35 N TJ above a 20 period 1 nm p-Al 0.8 Ga 0.2 N/ 1 nm p-Al 0.2 Ga 0.8 N short-period superlattice (SPSL). We observed a peak external quantum efficiency (EQE) of the λ = 294 nm TJ UV LED of 12.1%, and an EQE of 10.4% at 20 A/cm 2 and 9.1% at 35 A/cm 2 , with an excess voltage of 1.5 V at 1 A/cm 2 .

Source: Optics Express

DOI: 10.1364/oe.561096

Authors: Michael Wang, Wenting Gong, Feng Wu, Steven P. DenBaars, Shuji Nakamura, James S. Speck

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funders: National Science Foundation, King Abdulaziz City for Science and Technology, Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Awards: Materials Research Science and Engineering Center at UCSB, G932959169