Work

Surge Characteristics of Planar-Gate Silicon Carbide MOSFET in the Third Quadrant

Year: 2025

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2025.3561810

Authors: Binqi Liang, Xiang Cui, Feilin Zheng, Xuebao Li, Hongji Li, Zhongyuan Chen, Rui Jin, Xinling Tang

Institutions: North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Beijing Nova Program

Award: G6505087778

OpenAlex ID: W4409494289

FWCI: 1.847

Cites: 30

Cited by: 8

Related to: 10