Work

A New Back‐End‐Of‐Line Ferroelectric Field‐Effect Transistor Platform via Laser Processing (Small 15/2025)

Year: 2025

Type: article

Abstract: Field-Effect Transistors In article number 2406376, Wonjun Shin, Suraj S. Cheema, Daewoong Kwon, and co-workers demonstrates a breakthrough in ferroelectric field-effect transistor (FeFET) technology by integrating polycrystalline silicon channels via locally-confined laser thermal processing and hafnia-based ferroelectrics using low-temperature atomic layer deposition. The resulting BEOL-compatible FeFET platform achieves wafer-scale uniformity, record-high memory windows, and exceptional energy efficiency, paving the way for neuromorphic computing and monolithic 3D integration.

Source: Small

DOI: 10.1002/smll.202570113

Authors: Sang Woo Kim, Wonjun Shin, Ryun‐Han Koo, Jangsaeng Kim, Jiseong Im, Dooyong Koh, Jong‐Ho Lee, Suraj S Cheema, Daewoong Kwon

Institutions: Hanyang University, Massachusetts Institute of Technology, Sungkyunkwan University, Seoul National University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4409509003

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