Work

Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/adcd24

Authors: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Yeye Guo, Huili Tang, Qinglin Sai, Wenjun Liu

Institutions: Fudan University, Tongji University, Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Technology Commission of Shanghai Municipality

Awards: G4911633062, G6706031542

OpenAlex ID: W4409510985

FWCI: 0.974

Cites: 24

Cited by: 6

Related to: 10