Single event burnout in SiC MOSFETs induced by nuclear reactions with high-energy oxygen ions
Year: 2025
Type: article
Source: Chinese Physics B
Authors: Shi-Wei 世伟 Zhao 赵, Bing 兵 Ye 叶, Yu-Zhu 郁竹 Liu 刘, Xiao-Yu 晓宇 Yan 闫, Pei-Pei 培培 Hu 胡, Teng 腾 Zhang 张, Peng-Fei 鹏飞 Zhai 翟, Jing-Lai 敬来 Duan 段, Jie 杰 Liu 刘
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409513293