Work

Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel

Year: 2025

Type: article

Abstract: In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO). The junction between the diffused p‐NiO layer and the β‐Ga2O3 channel forms a depletion region, effectively blocking the channel in the normally‐off transistor. The fabricated β‐Ga2O3 MOS‐HJFET with a counter‐doped β‐Ga2O3 channel achieves a specific on‐resistance (Ron,sp) of 32.6 mΩ·cm2, threshold voltage (Vth) of 1.3 V, supporting a drain current of over 1 mA in the discrete device, and a high on/off current ratio of 108. Furthermore, guidelines for designing the enhancement‐mode MOS‐HJFET are proposed, considering the diffused length of p‐NiO and the thickness of the β‐Ga2O3 epitaxial layer.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.202400854

Authors: Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo

Institution: Pukyong National University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,560

Funders: National Research Foundation, Ministry of Trade, Industry and Energy, IC Design Education Center