Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs
Year: 2025
Type: article
Authors: Fan Yang, Xinxin Li, Yuke Ren, Shuti Li, Shuwen Zheng
Institution: South China Normal University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: G5272232618
OpenAlex ID: W4409533783
