Work

Enhanced Ti-Based Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors through SiNx-Assisted TiNx Formation

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c02207

Authors: Tsung-Han Chiang, You-Chen Weng, Chee-How Lu, Le Trung Hieu, Ching-Wen Chang, Hui Chun Huang, Chun I Kuo, Ashish Kumar Sahoo, Min-Lu Kao, Paritosh V. Wadekar, Quark Yungsung Chen, Edward Yi Chang

Institutions: National Yang Ming Chiao Tung University, National Taiwan Normal University, National Sun Yat-sen University, National Tsing Hua University, University of Houston

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: G1362517514, G2066613174, G5548449495, G8955063216

OpenAlex ID: W4409552396

FWCI: 0.31

Cites: 52

Cited by: 1

Related to: 10