Work

Systematic Investigation on the Performance and Reliability of 4H-SiC MOSFETs With Nonkiller Epitaxial Morphological Defects

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3556053

Authors: Yibo Zhang, Xiaoyan Tang, Hao Yuan, Jingkai Guo, Haohang Yang, Yu Zhou, Fengyu Du, Keyu Liu, Zhiwen Zhang, Chenyu Wang, Aijun Zhang, Qingwen Song, Chao Han, Yuming Zhang

Institution: Xidian University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: China Postdoctoral Science Foundation, National Key Research and Development Program of China

Awards: G3063251, G31397779

OpenAlex ID: W4409561285

FWCI: 0.693

Cites: 27

Cited by: 3

Related to: 10