Work

C-Band β-Ga₂O₃-on-SiC RF Power MOSFETs With High Output Power Density and Low Microwave Noise Figure

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3558492

Authors: Min Zhou, Hong Zhou, Sami Alghamdi, Guangjie Gao, Xi Liu, Mingjie Xiang, Xiaojin Chen, Zhihong Liu, Saud Wasly, Yue Hao, Jincheng Zhang

Institutions: Xidian University, Guangzhou Institute of Technology, King Abdulaziz University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National University's Basic Research Foundation of China

Awards: G5291503276, G5821942213, G7578523845

OpenAlex ID: W4409561287

FWCI: 0.489

Cites: 37

Cited by: 3

Related to: 10