USCIM: Computing-in-Memory With Unipolar Switching SOT-MRAM
Year: 2025
Type: article
Source: IEEE Transactions on Magnetics
Authors: Haiwen Li, Enyi Yao, Pei Qin, Sheng Jiang
Institution: South China University of Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G2324436285, G2621806792
OpenAlex ID: W4409561288
