Dual‐Functional Optoelectronic Synaptic Device Based on MoTe2/h‐BN Transistor Through UV Light Induced Doping
Year: 2025
Type: article
Source: Small
Institution: Tianjin University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G5965010814, G6524788109, G8672005498
OpenAlex ID: W4409567902
