Work

All-Solution-Processed IGZO Optoelectronic Synaptic Transistor with Dual-Mode Operation toward Artificial Vision Applications

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Realizing the dual-mode electric and optical synaptic plasticity within one neuromorphic device is impressive for the construction of a compact artificial visual system. Here, we proposed indium gallium zinc oxide (IGZO) photoelectric synaptic transistors utilizing all-solid-state electrolytes (Li-doped ZrO 2 ) as gate dielectric layers. The device was fabricated by using a facile and cost-effective all-solution method. The synaptic transistor exhibited dual-mode electric and optical synaptic plasticity. Meanwhile, the tunable conductance is achieved through electric potentiation and depression processes, demonstrating the potential for realizing neuromorphic computing. Based on this, a simulated convolutional neural network was designed to realize handwriting digit recognition, achieving an accuracy of 96.8%. Additionally, sophisticated neuromorphic applications such as logic operations, Pavlov’s classical experiment, and pupillary reflex simulation were successfully realized. Therefore, the designed transistor demonstrates significant potential for future applications in artificial vision.

Source: ACS Omega

DOI: 10.1021/acsomega.5c01052

Authors: Haonan Xu, Lilan Zou, Junru An, Shiwei Lin

Institutions: Hainan University, State Key Laboratory of Marine Resource Utilization in South China Sea

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,935

Funders: National Natural Science Foundation of China, Hainan University