Work

Effect of Heavy-Ion-Induced Latent Damage on SiC MOSFETs’ Gate Reliability

Year: 2025

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2025.3562193

Authors: Qifei Yuan, Qingkui Yu, Shuang Cao, Yi Sun, Bo Mei, Jingyi Liu, Qianyuan Wang, He Wang, Zhichao Wei, Hongwei Zhang, Teng Zhang, Song Bai

Institutions: China Academy of Space Technology, The 28th Research Institute of China Electronics Technology Group Corporation

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409581516

FWCI: 2.028

Cites: 32

Cited by: 9

Related to: 10