Work

Process‐Dependent Performance of Recessed‐Gate Enhancement‐Mode GaN p‐FET

Year: 2025

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202400969

Authors: Teng Li, Meng Zhang, Jingjing Yu, Jiawei Cui, Junjie Yang, Maojun Wang, Yamin Zhang, Shiwei Feng, Jin Wei

Institutions: Beijing University of Technology, Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409608915

FWCI: 0.31

Cites: 26

Cited by: 1

Related to: 10