Work

Enhanced Leakage Current and On-Resistance of β Gallium Oxide Schottky Barrier Diodes Using Effective Surface Modification

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00361

Authors: Ho Jung Jeon, Madani Labed, Jang Hyeok Park, Chowdam Venkata Prasad, S.J. Pearton, You Seung Rim

Institutions: Sejong University, University of Florida

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Defense Threat Reduction Agency

Awards: G4825581241, G772299097

OpenAlex ID: W4409620728

FWCI: 1.134

Cites: 43

Cited by: 7

Related to: 10