Work

Elimination of Edge Defects in SiC Crystals Grown Through Physical Vapor Transport Method

Year: 2025

Type: article

Source: Crystal Research and Technology

DOI: 10.1002/crat.202500028

Authors: Jingcheng Feng, Hao Xue, Gang Dong, Yujian Wang, Yujian Wang, Chengyuan Sun, Yunfei Shang, Zuotao Lei, Dalei Meng, Chunhui Yang, Yingmin Wang, Yingmin Wang

Institutions: China Electronics Technology Group Corporation, Harbin Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G8004977777

OpenAlex ID: W4409623694

FWCI: 0.676

Cites: 20

Cited by: 3

Related to: 10