Work

Insight into the High Hole Concentration of p-Type Ga 2 O 3 via In Situ Nitrogen Doping

Year: 2025

Type: article

Source: The Journal of Physical Chemistry Letters

DOI: 10.1021/acs.jpclett.5c00318

Authors: Yaoping Lu, Lemin Jia, Duanyang Chen, Titao Li, Hongji Qi, Xiaorui Xu, Xiaohang Li, Minmin Zhu, Haizhong Zhang, Xiaoqiang Lu

Institutions: Fuzhou University, Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, King Abdullah University of Science and Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Fujian Province, Fujian Provincial Department of Science and Technology, Science and Technology Bureau of Quanzhou

Awards: G1751233889, G3310485457, G5223305196, G5264398444, G6046782119

OpenAlex ID: W4409626364

FWCI: 2.401

Cites: 49

Cited by: 15

Related to: 10