Work

Investigation of gate conduction mechanisms in p-NiO gate HEMTs with a type-II band aligned NiO/AlGaN heterojunction

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0259821

Authors: Huaize Liu, Yanghu Peng, Hui Guo, Na Sun, Ruiling Gong, Guang Qiao, Pengfei Shao, Jiandong Ye, Rong Zhang, Dunjun Chen

Institution: Nanjing University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Jiangsu Province, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G110625647, G1785269170, G4616922906, G6771130816, G7449652921

OpenAlex ID: W4409628420

FWCI: 1.55

Cites: 29

Cited by: 5

Related to: 10