Work

Yttrium Doped Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Capacitor Exhibiting Fatigue Free (>10₁₂ Cycles), Long Retention, and Imprint Immune Performance at 4 K

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3562798

Authors: A. Agarwal, A. M. Walke, N. Ronchi, M. I. Popovici, W. C. Y. Ma, C. J. Su, K. H. Kao, Jan Van Houdt

Institutions: National Cheng Kung University, IMEC, National Sun Yat-sen University, National Yang Ming Chiao Tung University, KU Leuven

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: G16935026, G6176843618, G7619047382

OpenAlex ID: W4409640810

FWCI: 1.126

Cites: 37

Cited by: 5

Related to: 10