Work

Interface Properties Improvement and VFB Modulation on HfO₂/IL/Si₀.₇Ge₀.₃ Gate Stacks Using LaFMD Passivation Without EOT Compensation

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3562628

Authors: Xiaotong Mao, Yongliang Li, Yu Zhou, Xiaofeng Jia, Shuai Yang, Fei Zhao, Haoyan Liu, Longyu Sun, Shengkai Wang, Jianfeng Gao, Xiaolei Wang, Wenwu Wang

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G3484937837, G5626516026

OpenAlex ID: W4409640825

FWCI: 1.36

Cites: 17

Cited by: 6

Related to: 10