Artificial Neural Network-Based Screening Method for Short-Circuit Withstand Time in Packaged SiC MOSFETs to Enhance Device Consistency
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Hengyu Yu, Monikuntala Bhattacharya, Michael Jin, Limeng Shi, Shiva Houshmand, Atsushi Shimbori, Marvin H. White, Anant K. Agarwal
Institutions: The Ohio State University, Ford Motor Company (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409640858