Work

Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures

Year: 2025

Type: article

Abstract: Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3K for the first time. Parameter extraction involves analytical calculation and optimization using the iteratively re-weighted least squares (IRLS) and Monte Carlo methods. The temperature rise is estimated by capturing the correlation between thermal resistance and device temperature. This work provides a method for modeling FDSOI RF performance and for analyzing dynamic self-heating effects at cryogenic temperatures.

Source: IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2025.3562752

Authors: Hung-Chi Han, Edoardo Charbon, Christian Enz

Institution: École Polytechnique Fédérale de Lausanne

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funder: European Commission