Work

Low-Temperature and Solution-Processed Preparation of NiO x /InGaZnO Heterostructure for UV Photodetector

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3562954

Authors: Xiaoyan Li, Yubin Hu, Nan Jiang, Fangjun Wang, Xiaosheng Liu, Lei Liao, Wei Hu

Institution: Hunan University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Key Research and Development Program of Hunan Province of China, National Key Research and Development Program of China, Key Research and Development Program of Sichuan Province

Awards: G1663329059, G6980145265, G933977249

OpenAlex ID: W4409641250

FWCI:

Cites: 36

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Related to: 10