Work

Effect of Parasitic Inductance on Switching Transition for Four-Quadrant SiC-Based Current Source Inverter

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Power Electronics, Drives and Energy Systems

DOI: 10.1109/pedes61459.2024.10961375

Authors: Ashish Kumar, Apurv Kumar Yadav

Institution: Indian Institute of Technology Roorkee

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4409642653

FWCI:

Cites: 12

Cited by:

Related to: 10