Electric transport in doped Mott insulators dictated by a non-Ioffe-Larkin composition rule and spinons
Year: 2025
Type: article
Abstract: Electric resistivity is examined in the constrained Hilbert space of a doped Mott insulator, which is dictated by a non-Ioffe-Larkin composition rule due to the underlying mutual Chern-Simons topological gauge structure. In the low-temperature pseudogap phase, where holons remain condensed while spinons proliferate, charge transport is governed by chiral spinon excitation, comprising a bosonic spin-$\frac{1}{2}$ at the core of a supercurrent vortex. It leads to vanishing resistivity with the confinement of the spinons in the superconducting phase but low-$T$ divergence of the resistivity once the spinon confinement is disrupted by external magnetic fields. In the latter, the chiral spinons will generate a Hall number ${n}_{H}=$ doping concentration $\ensuremath{\delta}$ and a Nernst effect to signal underlying long-range entanglement between the charge and spin degrees of freedom. Their presence is further reflected in thermodynamic quantities such as specific heat and spin susceptibility. Finally, in the high-temperature spin-disordered phase, it is shown that the holons exhibit linear-$T$ resistivity by scattering with the spinons acting as free local moments, which generate randomized gauge fluxes as perceived by the charge degree of freedom.
Authors: Chuan Chen, Jia-Xin Zhang, Zhi-Jian Song, Zheng-Yu Weng
Institutions: Lanzhou University, Tsinghua University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4409645469