Modeling photoacid diffusion in chemically amplified resists via proximity effect correction in electron beam lithography
Year: 2025
Type: conference-paper
DOI: 10.1117/12.3051165
Institutions: Brookhaven National Laboratory, Stony Brook University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409655340
