Work

Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 °C) in HZO (>10 nm) Films Using Microwave Annealing

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3560925

Authors: Taeseung Jung, Hunbeom Shin, Jinho Ahn, Sanghun Jeon

Institutions: Korea Advanced Institute of Science and Technology, Hanyang University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Samsung Advanced Institute of Technology, National Research Foundation of Korea

Awards: G1505587438, G3657891420, G470384823, G623835629, G6842600927

OpenAlex ID: W4409659734

FWCI: 0.918

Cites: 31

Cited by: 4

Related to: 10