Work

Normally-Off HEMT-Based Bipolar p-FET With Enhanced Conduction Capability

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3559906

Authors: Chengcai Wang, Jinjin Tang, Junting Chen, Jun Ma, Mengyuan Hua

Institution: Southern University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Shenzhen Fundamental Research Program

Awards: G3644532254, G4139745460, G58799591, G7547530787, G7833136104, G8483179422

OpenAlex ID: W4409659747

FWCI: 0.311

Cites: 33

Cited by: 1

Related to: 10